Electron nanoprobe induced oxidation: a simulation of direct-write purification
نویسندگان
چکیده
منابع مشابه
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Figure SI-1. Line cross-sections corresponding to the AFM images in Figures 1b and 1c. Ge nanoribbons were written at 12 V and 1 !m s-1 and 14 V and 100 !m s-1 respectively. Figure SI-2. Current voltage characteristics measured during deposition. Voltage is measured on the sample. No deposition occurs for negative sample voltages, nor positive sample voltages below 6 volts.
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ژورنال
عنوان ژورنال: Physical Chemistry Chemical Physics
سال: 2015
ISSN: 1463-9076,1463-9084
DOI: 10.1039/c5cp01196e